mosfet design manager (station in guangdong).

MOSFET Design Manager | Station in Guangdong

• Strategic Leadership
• Innovation & IP Ownership
• End-to-End Technical Authority

about the company.
A global leader in motion subsystems and high-tech components. With a reputation for innovation and engineering excellence, they provide critical technology solutions to the automotive and industrial sectors worldwide. This is an opportunity to join an advanced R&D environment focused on precision and reliability.

• Device Architecture & TCAD: Lead the design of Trench MOSFET, Shielded Gate Trench (SGT), and Super-Junction structures using 2D/3D TCAD tools (Synopsys Sentaurus/Silvaco).
• Performance Optimization: Analyze and optimize critical parameters including Rds(on), Breakdown Voltage (BV), and switching performance (Qg/Qgd).
• Process Integration: Collaborate with external foundries to define process flows and design rules; translate silicon data from test chips into process improvements.
• Product Qualification: Support reliability testing (HTRB, H3TRB, ESD) and lead failure analysis to ensure zero-defect quality standards.
• Modeling & Simulation: Develop and validate compact SPICE/BSIM models for seamless circuit-level integration.

• A Bachelor’s degree or higher in Electrical Engineering, Physics, or a related field (Master's/PhD preferred).
• 8+ years of direct experience in power semiconductor device design and development.
• Deep expertise in power MOSFET device physics, breakdown mechanisms, and reliability physics.
• Proficiency in Python or Perl for simulation automation.
• Expert-level command of TCAD simulation suites (Sentaurus or Atlas) and statistical data analysis (DOE).
• Proven track record of managing process integration and correlating simulation results with actual silicon measurements.
• Hands-on experience with parameter analyzers (Keysight B1500), curve tracers, and oscilloscopes.
• Retired professionals are also welcomed